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ACS86MS
April 1995
Radiation Hardened Quad 2-Input Exclusive OR Gate
Pinouts
14 LEAD CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR, CDIP2-T14, LEAD FINISH C TOP VIEW
A1 1 B1 2 Y1 3 A2 4 B2 5 Y2 6 GND 7 14 VCC 13 B4 12 A4 11 Y4 10 B3 9 A3 8 Y3
Features
* 1.25 Micron Radiation Hardened SOS CMOS * Total Dose 300K RAD (Si) * Single Event Upset (SEU) Immunity <1 x 10-10 Errors/Bit-Day (Typ) * SEU LET Threshold >80 MEV-cm2/mg * Dose Rate Upset >10
11
RAD (Si)/s, 20ns Pulse
* Latch-Up Free Under Any Conditions * Military Temperature Range: -55oC to +125oC * Significant Power Reduction Compared to ALSTTL Logic * DC Operating Voltage Range: 4.5V to 5.5V * Input Logic Levels - VIL = 30% of VCC Max - VIH = 70% of VCC Min * Input Current 1A at VOL, VOH
14 LEAD CERAMIC FLATPACK MIL-STD-1835 DESIGNATOR, CDFP3-F14, LEAD FINISH C TOP VIEW
A1 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC B4 A4 Y4 B3 A3 Y3
Description
The Intersil ACS86MS is a radiation hardened quad 2-input exclusive OR gate. A high logic level on both inputs forces the output to a logic low state. The ACS86MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of the radiation hardened, high-speed, CMOS/SOS Logic Family.
B1 Y1 A2 B2 Y2 GND
Ordering Information
PART NUMBER ACS86DMSR ACS86KMSR ACS86D/Sample ACS86K/Sample ACS86HMSR TEMPERATURE RANGE -55oC -55oC to to +125oC +125oC SCREENING LEVEL Intersil Class S Equivalent Intersil Class S Equivalent Sample Sample Die PACKAGE 14 Lead SBDIP 14 Lead Ceramic Flatpack 14 Lead SBDIP 14 Lead Ceramic Flatpack Die
+25oC +25oC +25oC
Truth Table
INPUTS An L L H H Bn L H L H OUTPUT Yn L H H L
Functional Diagram
(1, 4, 9, 12) An Bn (2, 5, 10, 13)
(3, 6, 8, 11) Yn
NOTE: L = Logic Level Low, H = Logic Level High
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. 1-888-INTERSIL or 321-724-7143 | Copyright (c) Intersil Corporation 1999
Spec Number
1
518849 File Number 3995
Specifications ACS86MS
Absolute Maximum Ratings
Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -0.5V to +6.0V Input Voltage Range . . . . . . . . . . . . . . . . . . . . . .-0.5V to VCC +0.5V DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .10mA DC Drain Current, Any One Output. . . . . . . . . . . . . . . . . . . . . . .50mA Storage Temperature Range (TSTG) . . . . . . . . . . . -65oC to +150oC Lead Temperature (Soldering 10s) . . . . . . . . . . . . . . . . . . . . +265oC Junction Temperature (TJ) . . . . . . . . . . . . . . . . . . . . . . . . . . +175oC ESD Classification . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . Class 1 (All Voltages Referenced to VSS)
Reliability Information
Thermal Impedance JA JC DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 74oC/W 24oC/W Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . . 116oC/W 30oC/W Maximum Package Power Dissipation at +125oC DIP. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.7W Flatpack . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.4W Maximum Device Power Dissipation. . . . . . . . . . . . . . . . . . .(TBD)W Gate Count . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 52 Gates
CAUTION: Stresses above those listed in "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress only rating and operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied.
Operating Conditions
Supply Voltage Range . . . . . . . . . . . . . . . . . . . . . . . +4.5V to +5.5V Input Rise and Fall Time at 4.5V VCC (TR, TF) . . . . . . .10ns/ V Max Operating Temperature Range . . . . . . . . . . . . . . . . -55oC to +125oC Input High Voltage (VIH) . . . . . . . . . . . . . . . . . . VCC to 70% of VCC Input Low Voltage (VIL). . . . . . . . . . . . . . . . . . . . .0V to 30% of VCC
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS GROUP A SUBGROUPS 1 2, 3 Output Current (Source) IOH VCC = 4.5V, VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0V, (Note 2) VCC = 4.5V, VIH = 4.5V, VOUT = 0.4V, VIL = 0V, (Note 2) VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOH = -50A VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOH = -50A Output Voltage Low VOL VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOL = 50A VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOL = 50A Input Leakage Current IIN VCC = 5.5V, VIN = VCC or GND 1 2, 3 1 2, 3 1, 2, 3 LIMITS TEMPERATURE +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC +125oC, -55oC +25oC, +125oC, -55oC MIN -12 -8 12 8 VCC -0.1 MAX 5 100 UNITS A A mA mA mA mA V
PARAMETER Supply Current
SYMBOL ICC
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND
Output Current (Sink)
IOL
Output Voltage High
VOH
1, 2, 3
+25oC, +125oC, -55oC
VCC -0.1
-
V
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
1, 2, 3
+25oC, +125oC, -55oC
-
0.1
V
1 2, 3
+25oC +125oC, -55oC +25oC, +125oC, -55oC
-
0.5 1.0 -
A A V
Noise Immunity Functional Test NOTES:
FN
VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, (Note 3)
7, 8A, 8B
1. All voltages referenced to device GND. 2. Force/measure functions may be interchanged. 3. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0".
Spec Number 2
518849
Specifications ACS86MS
TABLE 2. AC ELECTRICAL PERFORMANCE CHARACTERISTICS (NOTES 1, 2) CONDITIONS VCC = 4.5V, VIH = 4.5V, VIL = 0V VCC = 4.5V, VIH = 4.5V, VIL = 0V GROUP A SUBGROUPS 9 10, 11 LIMITS TEMPERATURE +25oC +125oC, -55oC MIN 2 2 MAX 12 13 UNITS ns ns
PARAMETER Propagation Delay Input to Output
SYMBOL TPHL TPLH
NOTES: 1. All voltages referenced to device GND. 2. AC measurements assume RL = 500, CL = 50pF, Input TR = TF = 3ns. TABLE 3. ELECTRICAL PERFORMANCE CHARACTERISTICS LIMITS PARAMETER Capacitance Power Dissipation Input Capacitance SYMBOL CPD CIN CONDITIONS VCC = 5.0V, VIH = 5.0V, VIL = 0V, f = 1MHz VCC = 5.0V, VIH = 5.0V, VIL = 0V, f = 1MHz NOTE 1 1 1 1 TEMP +25oC +125oC +25oC +125oC MIN TYP MAX 10 10 UNITS pF pF pF pF
TBD TBD
-
NOTE: 1. The parameters listed in Table 3 are controlled via design or process parameters. Min and Max Limits are guaranteed but not directly tested. These parameters are characterized upon initial design release and upon design changes which affect these characteristics. TABLE 4. POST IRRADIATION ELECTRICAL PERFORMANCE CHARACTERISTICS RAD LIMITS TEMPERATURE +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC +25oC MIN -8.0 8.0 VCC -0.1 VCC -0.1 2 MAX 100 0.1 0.1 1 13 UNITS A mA mA V V V V A V ns
PARAMETER Supply Current Output Current (Source) Output Current (Sink) Output Voltage High
SYMBOL ICC IOH IOL VOH
(NOTE 1) CONDITIONS VCC = 5.5V, VIN = VCC or GND VCC = VIH = 4.5V, VOUT = VCC -0.4V, VIL = 0 VCC = VIH = 4.5V, VOUT = 0.4V, VIL = 0 VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOH = -50A VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOH = -50A
Output Voltage Low
VOL
VCC = 5.5V, VIH = 3.85V, VIL = 1.65V, IOL = 50A VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, IOL = 50A
Input Leakage Current Noise Immunity Functional Test Propagation Delay Input to Output
IIN FN TPHL TPLH
VCC = 5.5V, VIN = VCC or GND VCC = 4.5V, VIH = 3.15V, VIL = 1.35V, (Note 2) VCC = 4.5V, VIH = 4.5V, VIL = 0V
NOTES: 1. All voltages referenced to device GND. 2. For functional tests, VO 4.0V is recognized as a logic "1", and VO 0.5V is recognized as a logic "0". TABLE 5. DELTA PARAMETERS (+25oC) PARAMETER Supply Current Output Current NOTE: 1. All delta calculations are referenced to 0 hour readings or pre-life readings. ICC IOL/IOH SYMBOL (NOTE 1) DELTA LIMIT 1.0 15 UNITS A %
Spec Number 3
518849
Specifications ACS86MS
TABLE 6. APPLICABLE SUBGROUPS CONFORMANCE GROUP Initial Test (Preburn-In) Interim Test 1 (Postburn-In) Interim Test 2 (Postburn-In) PDA Interim Test 3 (Postburn-In) PDA Final Test Group A (Note 1) Group B Subgroup B-5 Subgroup B-6 Group D NOTE: 1. Alternate Group A testing may be exercised in accordance with MIL-STD-883, Method 5005. METHOD 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 100%/5004 Sample/5005 Sample/5005 Sample/5005 Sample/5005 GROUP A SUBGROUPS 1, 7, 9 1, 7, 9 1, 7, 9 1, 7, 9, Deltas 1, 7, 9 1, 7, 9, Deltas 2, 3, 8A, 8B, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11 1, 2, 3, 7, 8A, 8B, 9, 10, 11, Deltas 1, 7, 9 1, 7, 9 Subgroups 1, 2, 3, 9, 10, 11 ICC, IOL/H READ AND RECORD ICC, IOL/H ICC, IOL/H ICC, IOL/H
TABLE 7. TOTAL DOSE IRRADIATION TEST CONFORMANCE GROUP Group E Subgroup 2 NOTE: 1. Except FN test which will be performed 100% Go/No-Go. METHOD 5005 PRE RAD 1, 7, 9 POST RAD Table 4 READ AND RECORD PRE RAD 1, 9 POST RAD Table 4 (Note 1)
TABLE 8. BURN-IN TEST CONNECTIONS (+125oC < TA < 139oC) OSCILLATOR OPEN STATIC BURN-IN 1 (Note 1) STATIC BURN-IN 2 (Note 1) DYNAMIC BURN-IN (Note 1) NOTE: 1. Each pin except VCC and GND will have a series resistor of 500 5%. 7 3, 6, 8, 11 14 1, 2, 4, 5, 9, 10, 12, 13 7 3, 6, 8, 11 1, 2, 4, 5, 9, 10, 12, 13 1, 2, 4, 5, 7, 9, 10, 12, 13 3, 6, 8, 11 14 GROUND 1/2 VCC = 3V 0.5V VCC = 6V 0.5V 50kHz 25kHz
TABLE 9. IRRADIATION TEST CONNECTIONS (TA = +25oC, 5oC) FUNCTION Irradiation Circuit (Note 1) NOTE: 1. Each pin except VCC and GND will have a series resistor of 47k 5%. Group E, Subgroup 2, sample size is 4 dice/wafer, 0 failures. OPEN 3, 6, 8, 11 GROUND 7 VCC 0.5V 1, 2, 4, 5, 9, 10, 12, 13, 14
Spec Number 4
518849
Specifications ACS86MS Intersil - Space Products MS Screening
Wafer Lot Acceptance (All Lots) Method 5007 (Includes SEM) Radiation Verification (Each Wafer) Method 1019, 4 Samples/Wafer, 0 Rejects 100% Nondestructive Bond Pull Method 2023 100% Internal Visual Inspection Method 2010 100% Temperature Cycling Method 1010 Condition C (-65o to +150oC) 100% Constant Acceleration 100% PIND Testing 100% External Visual Inspection 100% Serialization 100% Initial Electrical Test 100% Static Burn-In 1 Method 1015, 24 Hours at +125oC Min 100% Interim Electrical Test 1 (Note 1)
NOTES: 1. Failures from interim electrical tests 1 and 2 are combined for determining PDA (PDA = 5% for subgroups 1, 7, 9 and delta failures combined, PDA = 3% for subgroup 7 failures). Interim electrical tests 3 PDA (PDA = 5% for subgroups 1, 7, 9 and delta failures combined, PDA = 3% for subgroup 7 failures). 2. These steps are optional, and should be listed on the purchase order if required. 3. Data Package Contents: Cover Sheet (P.O. Number, Customer Number, Lot Date Code, Intersil Number, Lot Number, Quantity). Certificate of Conformance (as found on shipper). Lot Serial Number Sheet (Good Unit(s) Serial Number and Lot Number). Variables Data (All Read, Record, and delta operations). Group A Attributes Data Summary. Wafer Lot Acceptance Report (Method 5007) to include reproductions of SEM photos. NOTE: SEM photos to include percent of step coverage. X-Ray Report and Film, including penetrometer measurements. GAMMA Radiation Report with initial shipment of devices from the same wafer lot; containing a Cover Page, Disposition, RAD Dose, Lot Number, Test Package, Spec Number(s), Test Equipment, etc. Irradiation Read and Record data will be on file at Intersil.
100% Static Burn-In 2 Method 1015, 24 Hours at +125oC Min 100% Interim Electrical Test 2 (Note 1) 100% Dynamic Burn-In Method 1015, 240 Hours at +125oC or 180 Hours at +135oC 100% Interim Electrical Test 3 (Note 1) 100% Final Electrical Test 100% Fine and Gross Seal Method 1014 100% Radiographics Method 2012 (2 Views) 100% External Visual Method 2009 Group A (All Tests) Method 5005 (Class S) Group B (Optional) Method 5005 (Class S) (Note 2) Group D (Optional) Method 5005 (Class S) (Note 2) CSI and/or GSI (Optional) (Note 2) Data Package Generation (Note 3)
Propagation Delay Timing Diagram and Load Circuit
DUT VIH VS VSS TPLH TPHL VOH VS VOL OUTPUT INPUT CL 50pF TEST POINT RL 500
AC VOLTAGE LEVELS PARAMETER VCC VIH VS VIL GND ACS 4.50 4.50 2.25 0 0 UNITS V V V V V
Spec Number 5
518849
ACS86MS Die Characteristics
DIE DIMENSIONS: 88 mils x 88 mils 2.24mm x 2.24mm METALLIZATION: Type: AlSiCu Metal 1 Thickness: 6.75kA (Min), 8.25kA (Max) Metal 2 Thickness: 9kA (Min), 11kA (Max) GLASSIVATION: Type: SiO2 Thickness: 8kA 1kA DIE ATTACH: Material: Silver Glass or JM7000 Polymer after 7/1/95 WORST CASE CURRENT DENSITY: < 2.0 x 105 A/cm2 BOND PAD SIZE: > 4.3 mils x 4.3 mils > 110m x 110m
Metallization Mask Layout
ACS86MS
B1 (2) A1 (1) VCC (14) B4 (13)
Y1 (3)
(12) A4
A2 (4)
(11) Y4
NC
NC
B2 (5)
(10) B3
(6) Y2
(7) GND
(8) Y3
(9) A3
All Intersil semiconductor products are manufactured, assembled and tested under ISO9000 quality systems certification.
Intersil products are sold by description only. Intersil Corporation reserves the right to make changes in circuit design and/or specifications at any time without notice. Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see web site http://www.intersil.com
Spec Number 6
518849

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